ISSN print edition: 0366-6352 ISSN electronic edition: 1336-9075 Registr. No.: MK SR 9/7 Published monthly

Optimizing dielectric attributes of NiO/P(VDF–HFP) composite films through filling fine α-Al₂O₃ particles

Peng Gu

Faculty of Teacher Education, Aba Teachers University, Shuimo Town, Wenchuan County, People’s Republic of China

E-mail: gupeng2825@163.com

Received: 19 October 2024  Accepted: 3 June 2025

Abstract:

Dielectric composites with high dielectric constant, minimal dielectric loss and low conductivity can well serve for energy storage capacitors. High dielectric loss is not favorable due to large energy waste. Here, to improve dielectric constant of poly(vinylidene fluoride–hexafluoropropylene) by electric percolation, semiconducting NiO filler was added to form composites. However, high leakage current from interfaces can lead to high dielectric loss. Doping insulating α-Al₂O₃ particles with stable structure, low chemical activity and high modulus into above binary composites can reduce dielectric loss. By changing NiO dose, dielectric constant was well tailored. Dose of α-Al₂O₃ was left unchanged. Dielectric loss, conductivity and dielectric constant of composites were measured. By the same NiO loading, dielectric loss, conductivity and dielectric constant in ternary composites can be reduced, compared with binary composites. The optimal ternary composite should contain 35 wt% NiO and 4 wt% α-Al₂O₃. Optimized dielectric traits of this composite can be reflected by dielectric constant of ~ 64 and dielectric loss of ~ 0.27 under 100 Hz electric field.

Keywords: Dielectric constant; Dielectric loss; Composite film; Nickel oxide; Alumina

Full paper is available at www.springerlink.com.

DOI: 10.1007/s11696-025-04176-4

Chemical Papers 79 (9) 6091–6101 (2025)