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Improved sensing performance of porous silicon photodetector with CuO nanoparticles

Haitham T. Hussein, Mustafa K. A. Mohammed, Reham I. Kamel, and Uday M. Nayef

Department of Applied Science, University of Technology, Baghdad, Iraq



Received: 6 May 2021  Accepted: 12 July 2021


In this work, n-type porous silicon (n-PS) was fabricated via photoelectrochemical etching (PECE) method with different etching current densities, including 5, 10, 15, 20, and 25 mA/cm2 at constant concentration of HF about 20%. The suspension mixture of standard copper oxide nanoparticles (CuO-NPs) was prepared by dissolving 0.2 g of CuO powder in 100-ml ethanol. Then, CuO-NPs were deposited on n-PS surface employing the drop-casting method. X-ray diffraction and scanning electron microscope techniques proved the cubic crystal phase with porous morphology. The current–voltage (J-V) measurements were conducted in the dark and under illumination with different intensities for n-PS and CuO/PS samples. To evaluate the photodetector-sensing performance, the responsivity (Rλ), detectivity (D), and the quantum efficiency (Q.E) tests were performed for all samples at room temperature. All results showed that the CuO-NPs on the n-PS surface lead to increase Rλ, D, and Q.E compared with n-PS-only sample.

Keywords: Porous silicon; Copper oxide; Photodetectors sensor; Nanoparticles; Photoelectrochemical etching

Full paper is available at

DOI: 10.1007/s11696-021-01789-3


Chemical Papers 75 (12) 6257–6264 (2021)

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